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參數(shù)資料
| 型號： | MJB18004D2T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 222K |
| 代理商： | MJB18004D2T4 |
MJB18004D2T4
http://onsemi.com
10
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
Inductive Switching
L = 200 H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired Ib1
RBSOA
L = 500 H
RB2 = 0
VCC = 15 Volts
RB1 selected
for
desired Ib1
+15 V
1 F
150
3 W
100
3 W
MPF930
+10 V
50
COMMON
-Voff
500 F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
3 W
100 F
Iout
A
1 F
RB2
RB1
IC PEAK
VCE PEAK
VCE
IB
IB1
IB2
TYPICAL CHARACTERISTICS
Figure 28. Forward Bias Safe Operating Area
100
0.01
1000
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 29. Reverse Bias Safe Operating Area
6
2
0
1000
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
4
100
600
1
0.1
I C
,COLLECT
OR
CURRENT
(AMPS)
I C
,COLLECT
OR
CURRENT
(AMPS)
DC
5 ms
1 ms
10 s
1 s
EXTENDED
SOA
3
1
0 V
-1.5
V
-5 V
TC ≤ 125°C
GAIN ≥ 5
LC = 2 mH
10
5
400
800
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