參數(shù)資料
型號: MJB18004D2T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: D2PAK-3
文件頁數(shù): 12/16頁
文件大?。?/td> 222K
代理商: MJB18004D2T4
MJB18004D2T4
http://onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
h FE
,DC
CURRENT
GAIN
TJ = 125°C
TJ = 25°C
TJ = -20°C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
10
1
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
h FE
,DC
CURRENT
GAIN
TJ = 125°C
TJ = -20°C
VCE = 5 V
Figure 3. Collector Saturation Region
3
2
0
10
1
0.1
0.01
IB, BASE CURRENT (mA)
IC = 500 mA
Figure 4. Collector–Emitter Saturation
Voltage
10
1
0.1
10
1
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
TJ = 25°C
TJ = -20°C
IC/IB = 5
V CE
,VOL
TAGE
(VOL
TS)
V CE
,VOL
TAGE
(VOL
TS)
1
TJ = 25°C
1 A
5 A
Figure 5. Collector–Emitter Saturation
Voltage
10
1
0.1
10
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector–Emitter Saturation
Voltage
10
1
0.1
10
0.1
0.01
0.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
TJ = -20°C
V CE
,VOL
TAGE
(VOL
TS)
V CE
,VOL
TAGE
(VOL
TS)
1
IC/IB = 10
TJ = 125°C
TJ = -20°C
IC/IB = 20
4 A
3 A
2 A
TJ = 25°C
1
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