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參數(shù)資料
| 型號： | MJ10022 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 45/63頁 |
| 文件大?。?/td> | 441K |
| 代理商： | MJ10022 |
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MJ10022 MJ10023
3–476
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform is
shown in Figure 7 to aid on the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222A:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ` tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user orinented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
2.0
5.0
10
20
40
0.4
1.0
t,TIME
(
s)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Figure 10. Typical Turn–On Switching Times
IC, COLLECTOR CURRENT (AMPS)
2.0
5.0
10
20
40
Figure 11. Typical Turn–Off Switching Times
IC, COLLECTOR CURRENT (AMPS)
t,TIME
(
s)
Figure 12. Thermal Response
t, TIME (ms)
1.0
0.01
0.1
r(t)
,TRANSIENT
THERMAL
1.0
10
100
10000
R
θJC(t) = r(t) RθJC
R
θJC = 0.7°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
SINGLE PULSE
RESIST
ANCE
(NORMALIZED)
1000
0.02
0.05
0.1
0.2
0.5
1.0
2.0
tf
VCC = 250 V
IC/IB1 = 20
TJ = 25°C
ts
td
tr
0.4
1.0
VCC = 250 V
IC/IB1 = 20
VBE(off) = 5 V
D = 0.5
0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
0.2
0.1
RESISTIVE SWITCHING
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10023 | 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10023 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10024 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Darlington Transistors NPN |
| MJ10025 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 850V TO-3 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:850V; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ1002F | 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 10K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack |
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