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參數(shù)資料
| 型號(hào)： | MJ3281A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/61頁(yè) |
| 文件大?。?/td> | 408K |
| 代理商： | MJ3281A |
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Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJ3281A and MJ1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
—hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 sec
High fT — 30 MHz Typical
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
200
Vdc
Collector–Base Voltage
VCBO
200
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
Collector–Emitter Voltage — 1.5 V
VCEX
200
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
15
25
Adc
Base Current — Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
250
1.43
Watts
W/
°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
°C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJ3281A
MJ1302A
*
*Motorola Preferred Device
NPN
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
250 WATTS
PNP
*
CASE 1–07
TO–204AA
(TO–3)
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