參數(shù)資料
型號(hào): MJ10022
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝: METAL, TO-3, 2 PIN
文件頁數(shù): 23/63頁
文件大小: 441K
代理商: MJ10022
MJ10022 MJ10023
3–474
Motorola Bipolar Power Transistor Device Data
,C
OLLE
CT
OR
C
URREN
T
(A
)
I C
V
CE
,C
OLLE
CT
OR–EMI
TT
ER
V
OL
TAGE
(
V
OL
T
S
)
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
1.0
2.0
5.0
40
0.4
10
1.0
300
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
5.0
40
200
50
0.4
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
5.0
2.1
1.8
0.9
0.6
Figure 3. Collector–Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
5.0
0.01
Figure 4. Base–Emitter Saturation Voltage
IB, BASE CURRENT (AMP)
0.1
10
4.5
0.5
h
FE
,DC
C
URREN
T
GAIN
VCE = 5 V
0.3
IC = 10 A
V
BE(sat)
,BASE–EMITTER
4.5
VR, REVERSE VOLTAGE (VOLTS)
20
100
400
– 0.2
Figure 5. Collector Cutoff Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
10 –1
Figure 6. Cob, Output Capacitance
104
40
103
100
0
+ 0.2
+ 0.8
VCE = 250 V
TJ = 125°C
100
°C
75
°C
25
°C
C,
CAP
ACIT
ANCE
(pF)
100
30
0.4
10
2.0
10
40
20
+ 0.6
200
100
50
400
200
50
10
IC/IB = 10
TJ = 100°C
TJ = 25°C
5.0
2.0
1.0
0.5
0.2
0.02
0.05
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.5
2.4
2.7
3.0
2.1
1.8
0.9
0.6
0.3
1.2
1.5
2.4
2.7
3.0
TJ = 100°C
IC = 20 A
VCE @ 100°C
VCE @ 25°C
VBE @ 100°C
VBE @ 25°C
20
IC = 40 A
20
IC/IB = 10
+ 0.4
TYPICAL ELECTRICAL CHARACTERISTICS
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