參數(shù)資料
型號(hào)： MJ10022
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝： METAL, TO-3, 2 PIN
文件頁(yè)數(shù)： 1/63頁(yè)
文件大小： 441K
代理商： MJ10022
3–472
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn–Off Times
150 ns Inductive Fall Time @ 25
_C (Typ)
300 ns Inductive Storage Time @ 25
_C (Typ)
Operating Temperature Range – 65 to + 200_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ10022
MJ10023
Unit
Collector–Emitter Voltage
VCEO
350
400
Vdc
Collector–Emitter Voltage
VCEV
450
600
Vdc
Emitter Base Voltage
VEB
80
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
40
80
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
40
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
250
143
1.43
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
40 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 AND 400 VOLTS
250 WATTS
MJ10022
MJ10023
CASE 197A–05
TO–204AE (TO–3)
≈ 100
≈ 15
相關(guān)PDF資料
PDF描述
MJ3000 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ2500 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
MJ3281A 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ1302A 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA
MJ410 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10023 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:40A; DC Current Gain hFE:600; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10023 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
MJ10024 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Darlington Transistors NPN
MJ10025 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 850V TO-3 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 850V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:850V; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ1002F 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 10K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack
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