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參數(shù)資料
| 型號： | MH28D72KLG-75 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| 中文描述： | 9663676416位（134217728 - Word的72位），雙數(shù)據(jù)速率同步DRAM模塊 |
| 文件頁數(shù)： | 26/39頁 |
| 文件大小： | 337K |
| 代理商： | MH28D72KLG-75 |
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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH28D72KLG-75,-10
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0412-0.1
21.Mar.2001
Preliminary Spec.
Some contents are subject to change without notice.
26
BURST INTERRUPTION
[Read Interrupted by Read]
Burst read operation can be interrupted by new read of any bank. Random column access is allowed.
READ to READ interval is minimum 1CLK.
Read Interrupted by Read (BL=8, CL=2(Discrete))
/CLK
CLK
[Read Interrupted by precharge]
Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is
minimum 1 CLK. A PRE command to output disable latency is equivalent to the /CAS Latency. As
a result, READ to PRE interval determines valid data length to be output. The figure below shows
examples of BL=8.
Read Interrupted by Precharge (BL=8)
Module input and output timing.
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
Command
A0-9,11
A10
BA0,1
DQ
Yi
READ READ
READ
READ
Yj
Yk
Yl
0
0
0
0
00
10
00
01
DQS
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0Qak1Qak2 Qak3Qak4Qak5Qal0 Qal1 Qal2 Qal3 Qal4 Qal5 Qal6 Qal7
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4 Q5
PRE
READ
READ
PRE
READ PRE
DQS
DQS
Module input and output timing.
Discrete
CL=3.5
Module
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