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參數資料
| 型號： | MEM4X16E43VTW-5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4 MEG x 16 EDO DRAM |
| 中文描述： | 4邁可× 16 EDO公司的DRAM |
| 文件頁數： | 9/24頁 |
| 文件大?。?/td> | 598K |
| 代理商： | MEM4X16E43VTW-5 |
9
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
CC
= +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to “Dont Care” during Self Refresh
CAS# hold time (CBR Refresh)
Last CAS# going LOW to first CAS# to return HIGH
CAS# to output in Low-Z
Data output hold after CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable time
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold time from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
OE# setup prior to RAS# during HIDDEN REFRESH cycle
-5
-6
SYMBOL
t
AA
t
ACH
t
AR
t
ASC
t
ASR
t
AWD
t
CAC
t
CAH
t
CAS
t
CHD
t
CHR
t
CLCH
t
CLZ
t
COH
t
CP
t
CPA
t
CRP
t
CSH
t
CSR
t
CWD
t
CWL
t
DH
t
DS
t
OD
t
OE
t
OEH
MIN
MAX
25
MIN
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
12
38
0
0
42
15
45
0
0
49
28
28
18
29
28
13
15
8
8
15
8
5
0
3
8
10
10
15
10
5
0
3
10
10,000
10,000
30, 32
4, 31
31
29
13, 33
29
31
31
4, 28
18, 28
31
19, 29
19, 29
24, 25
20
25
28
35
5
38
5
28
8
8
0
0
5
45
5
35
10
10
0
0
12
12
15
15
8
10
t
OEHC
t
OEP
t
OES
t
OFF
t
ORD
5
5
4
0
0
10
5
5
0
0
ns
ns
ns
ns
ns
12
15
17, 24, 29
CAPACITANCE
(Note: 2)
PARAMETER
Input Capacitance: Address pins
Input Capacitance: RAS#, CAS#, WE#, OE#
Input/Output Capacitance: DQ
SYMBOL
C
I
1
C
I
2
C
IO
MAX
5
7
7
UNITS
pF
pF
pF
4 MEG x 16
EDO DRAM
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