參數(shù)資料
型號: MEM4X16E43VTW-5
廠商: Electronic Theatre Controls, Inc.
英文描述: 4 MEG x 16 EDO DRAM
中文描述: 4邁可× 16 EDO公司的DRAM
文件頁數(shù): 12/24頁
文件大?。?/td> 598K
代理商: MEM4X16E43VTW-5
12
NOTES (continued)
28. Output parameter (DQx) is referenced to
corresponding CAS# input; DQ0-DQ7 by CASL#
and DQ8-DQ15 by CASH#.
29. Each CASx# must meet minimum pulse width.
30. The last CASx# edge to transition HIGH.
31. Last falling CASx# edge to first rising CASx#
edge.
32. Last rising CASx# edge to first falling CASx#
edge.
33. Last rising CASx# edge to next cycles last rising
CASx# edge.
34. Last CASx# to go LOW.
35. V
IH
overshoot: V
IH
(MAX ) = V
CC
+ 2V for a pulse
width
3ns, and the pulse width cannot be
greater than one third of the cycle rate. V
IL
undershoot: V
IL
(MIN) = -2V for a pulse width
3ns, and the pulse width cannot be greater than
one third of the cycle rate.
36. NC pins are assumed to be left floating and are
not tested for leakage.
37. Self refresh and extended refresh for either device
requires that at least 4,096 cycles be completed
every 128ms.
4 MEG x 16
EDO DRAM
相關(guān)PDF資料
PDF描述
MF-100 GENERAL PURPOSE METAL FILM RESISTORS
MF-100T100100K0.5 GENERAL PURPOSE METAL FILM RESISTORS
MF-100T100100K1 GENERAL PURPOSE METAL FILM RESISTORS
MF-100T100100K5 GENERAL PURPOSE METAL FILM RESISTORS
MF-12 GENERAL PURPOSE METAL FILM RESISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MEM512SD-DDR2-5 制造商:IBase Technology (USA) Inc. 功能描述:512MB SO-DIMM DDR-2, 533MHZ - Bulk
MEM-6106-1024-5E 制造商:Emerson Network Power 功能描述:1GB MEMORY FOR CPCI-6106 - Bulk
MEMA14103A 制造商:Hubbell Wiring Device-Kellems 功能描述:MICRO-QCK, M/F EXT 4P SINGL KEY 0.3M
MEMA14105A 制造商:Hubbell Wiring Device-Kellems 功能描述:MICRO-QCK, M/F EXT 4P SINGL KEY 0.5M
MEMA1411A 制造商:Hubbell Wiring Device-Kellems 功能描述:MICRO-QCK, M/F EXT MALE 4P SGL KEY 4M