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參數(shù)資料
| 型號(hào)： | MEM4X16E43VTW-5 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4 MEG x 16 EDO DRAM |
| 中文描述： | 4邁可× 16 EDO公司的DRAM |
| 文件頁(yè)數(shù)： | 10/24頁(yè) |
| 文件大?。?/td> | 598K |
| 代理商： | MEM4X16E43VTW-5 |
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10
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
CC
= +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (Self Refresh)
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# to outputs in High-Z
WRITE command pulse width
WE# pulse widths to disable outputs
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
PC
t
PRWC
t
RAC
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
t
WRH
t
WRP
MIN
20
47
MAX
MIN
25
56
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
μs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
34
34
50
60
9
7
12
10
60
60
100
104
14
0
0
15
50
50
100
84
11
0
0
10,000
125,000
10,000
125,000
14, 28
16, 30
28
22, 23
23
64
128
64
128
30
5
90
0
13
116
67
13
2
8
38
0
40
5
105
0
15
140
79
15
2
10
45
0
16
35
18
50
50
35
18, 28
12
15
5
10
8
8
5
10
10
10
4 MEG x 16
EDO DRAM
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