參數(shù)資料
型號(hào): MCZ33970EG
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Dual Gauge Driver Integrated Circuit with Improved Damping Algorithms
中文描述: 雙計(jì)驅(qū)動(dòng)集成電路與改進(jìn)的阻尼算法
文件頁數(shù): 6/36頁
文件大小: 430K
代理商: MCZ33970EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
33970
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
POWER OUTPUTS (continued)
Output Flyback Clamp
(10)
V
FB
V
ST6
+ 0.5 V
ST6
+ 1.0
V
Output Current Limit (Output = VST6)
I
LIM
40
100
170
mA
Overtemperature Shutdown
(10)
OT
SD
155
180
°
C
Overtemperature Hysteresis
(10)
OT
HYST
8.0
16
°
C
CONTROL I/O
Input Logic High Voltage
(11)
V
IH
2.0
V
Input Logic Low Voltage
(11)
V
IL
0.8
V
Input Logic Voltage Hysteresis
(10)
V
IN(HYST)
100
mV
Input Logic Pull Down Current (SI, SCLK)
I
DWN
3.0
20
μ
A
Input Logic Pull-Up Current (
CS
,
RST
)
I
UP
5.0
20
μ
A
SO High-State Output Voltage (I
OH
= 1.0 mA)
V
SOH
0.8 V
DD
V
SO Low-State Output Voltage (I
OL
= -1.6 mA)
V
SOL
0.2
0.4
V
SO Tri-State Leakage Current (
CS
3.5 V)
I
SOLK
-5.0
0
5.0
μ
A
Input Capacitance
(12)
C
IN
4.0
12
pF
SO Tri-State Capacitance
(12)
C
SO
20
pF
ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT)
ADC Gain
(10)
,
(13)
G
ADC
100
188
270
Counts/V/
ms
Notes
10.
11.
12.
13.
This parameter is guaranteed by design; however, it is not production tested.
V
DD
= 5.0 V.
Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested.
Reference
Figure 8, RTZ Accumulator (Typical)
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V < V
DD
< 5.25 V, -40°C < T
A
< 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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