參數(shù)資料
型號： MCZ33889BEG
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： System Basis Chip with Low Speed Fault Tolerant CAN Interface
中文描述： 系統(tǒng)基礎(chǔ)芯片與低速容錯CAN接口
文件頁數(shù)： 20/60頁
文件大?。?/td> 705K
代理商： MCZ33889BEG
Analog Integrated Circuit Device Data
Freescale Semiconductor
20
33889
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Loop time Tx to Rx, no bus failure, MC33889D only (
(27)
,
Figure 5
) (ISO ICT test series 10)
Tx high to low transition (dominant edge)
Tx low to high transition (recessive edge)
t
LOOPRD
1.15
1.45
1.5
1.5
μ
s
Loop time Tx to Rx, with bus failure, MC33889D only (
(27)
,
Figure 6
) (ISO ICT test series 10)
Tx high to low transition (dominant edge)
Tx low to high transition (recessive edge)
t
LOOPRD-F
-
-
1.9
1.9
μ
s
Loop time Tx to Rx, with bus failure and +-1.5V gnd shift, 5
nodes network, MC33889D,(
(28)
,
Figure 7
, ISO ICT tests
series 11)
t
LOOPRD/DR-F+GS
3.6
μ
s
Min. Dominant Time For Wake-up On CANL or CANH
(Term Vbat; V
SUP
= 12V) Guaranteed by design.
MC33889B
MC33889D
t
WAKE
8.0
30
16
30
μ
s
Failure 3 Detection Time (Normal Mode)
t
DF3
10
30
80
μ
s
Failure 3 Recovery Time (Normal Mode)
t
DR3
160
μ
s
Failure 6 Detection Time (Normal Mode)
t
DF6
50
200
500
μ
s
Failure 6 Recovery Time (Normal Mode)
t
DR6
150
200
1000
μ
s
Failure 4, 7 Detection Time (Normal Mode)
t
DF47
0.75
1.5
4.0
ms
Failure 4, 7 Recovery Time (Normal Mode)
t
DR47
10
30
60
μ
s
Failure 3a, 8 Detection Time (Normal Mode)
t
DF8
0.75
1.7
4.0
ms
Failure 3a, 8 Recovery Time (Normal Mode)
tT
DR8
0.75
1.5
4.0
ms
Failure 4, 7 Detection Time, (Term V
BAT
; V
SUP
= 12 V)
t
DR47
0.8
1.2
8.0
ms
Failure 4, 7 Recovery Time (Term V
BAT
; V
SUP
= 12 V)
t
DR47
1.92
ms
Failure 3 Detection Time (Term V
BAT
; V
SUP
= 12 V)
t
DR3
3.84
ms
Failure 3 Recovery Time (Term V
BAT
; V
SUP
= 12 V)
t
DR3
1.92
ms
Failure 3a, 8Detection Time (Term V
BAT
; V
SUP
= 12 V)
t
DR8
2.3
ms
Failure 3a, 8 Recovery Time (Term V
BAT
; V
SUP
= 12 V)
t
DR8
1.2
ms
Notes
27.
28.
AC characteristic according to ISO11898-3, tested per figure 5 and 6. Guaranteed by design, room temperature only.
AC characteristic according to ISO11898-3, tested per figure 7. Max reported is the typical measurement under the worst condition
(gnd shift, dominant/recessive edge, at source or destination node. ref to ISO test specification). Guaranteed by design, room
temperature only.
Table 5. Dynamic Electrical Characteristics (continued)
V
SUP
From 5.5 V to 18 V, V2INT from 4.75 to 5.25 V and T
J
from -40°C to 150°C unless otherwise noted. Typical values
noted reflect the approximate parameter means at
T
A
= 25°
C under nominal conditions unless otherwise noted.
Conditions
Symbol
Min
Typ
Max
Unit
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCZ33889BEG 制造商:Freescale Semiconductor 功能描述:IC SYSTEM BASIS W/CAN TRANCEIVER
MCZ33889BEG/R2 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:System Basis Chip with Low Speed Fault Tolerant CAN Interface
MCZ33889BEGR2 功能描述:網(wǎng)絡(luò)控制器與處理器 IC SBC-LITE-LS-CAN RoHS:否 制造商:Micrel 產(chǎn)品:Controller Area Network (CAN) 收發(fā)器數(shù)量: 數(shù)據(jù)速率: 電源電流（最大值）:595 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PBGA-400 封裝:Tray
MCZ33889DEG 功能描述:網(wǎng)絡(luò)控制器與處理器 IC SBC-LITE-LS-CAN RoHS:否 制造商:Micrel 產(chǎn)品:Controller Area Network (CAN) 收發(fā)器數(shù)量: 數(shù)據(jù)速率: 電源電流（最大值）:595 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PBGA-400 封裝:Tray
MCZ33889DEG 制造商:Freescale Semiconductor 功能描述:IC SYSTEM BASIS W/CAN TRANCEIVER
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