參數(shù)資料
型號: MCZ33889BEG
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: System Basis Chip with Low Speed Fault Tolerant CAN Interface
中文描述: 系統(tǒng)基礎(chǔ)芯片與低速容錯(cuò)CAN接口
文件頁數(shù): 10/60頁
文件大?。?/td> 705K
代理商: MCZ33889BEG
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
33889
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Reset threshold 1
Default value after reset.
(15)
V
RST-TH1
4.5
4.6
4.7
V
Reset threshold 2
(15)
V
RST-TH2
4.1
4.2
4.3
V
Reset duration
RESET-DUR
0.85
1.0
2.0
ms
VDD1 range for Reset Active
V
DD
1.0
-
-
V
Reset Delay Time
Measured at 50% of reset signal.
(16)
t
D
5.0
-
20
μ
s
Line Regulation
9.0 V < V
SUP
< 18, I
DD
= 10 mA
LR1
-
5.0
25
mV
Line Regulation
5.5 V < V
SUP
< 27 V, I
DD
= 10 mA
LR2
-
10
25
mV
Load Regulation
1 mA < I
IDD
< 200 mA
LD
-
25
75
mV
Thermal stability
V
SUP
= 13.5 V, I = 100 mA
THERMS
-
5.0
-
mV
V2 REGULATOR (V2)
(17)
V2 Output Voltage
I2 from 2.0 to 200 mA
5.5 V < V
SUP
< 27 V
V2
0.99
1.0
1.01
V
DD1
I2 output current (for information only)
Depending on the external ballast transistor
I2
200
-
-
mA
V2 CTRL sink current capability
I2
CTRL
10
-
-
mA
V2LOW flag threshold
V2L
TH
3.75
4.0
4.25
V
Internal V2 Supply Current (CAN and SBC in Normal
Mode). TX = 5.0 V, CAN in Recessive State
I
V2RS
3.8
5.6
6.8
mA
Internal V2 Supply Current (CAN and SBC in Normal
Mode). TX = 0.0 V, No Load, CAN in Dominant State
I
V2DS
4.0
5.8
7.0
mA
Internal V2 Supply Current (CAN in Receive Only Mode,
SBC in Normal mode). V
SUP
= 12 V
I
V2R
80
120
μ
A
Internal V2 Supply Current (CAN in Bus TermVbat mode,
SBC in normal mode), V
SUP
= 12 V
I
V2BT
35
60
μ
A
Notes
15.
16.
17.
Selectable by SPI
Guaranteed by design
V2 TRACKING VOLTAGE REGULATOR -
V2 specification with external capacitor
- option 1: C
22
μ
F and ESR < 10 ohm. Using a resistor of 2 kohm or less between the base and emitter of the external PNP is
recommended.
- option2: 1.0
μ
F < C < 22
μ
F and ESR < 10 ohm. In this case depending on the ballast transistor gain an additional resistor and
capacitor network between emitter and base of PNP ballast transistor might be required. Refer to Freescale application information
or contact your local technical support.
- option 3: 10uF < C < 22uF ESR > 0.2 ohms: a resistor of 2 kohm or less is required between the base and emitter of the external PNP.
Table 4. Static Electrical Characteristics (continued)
.
Characteristics noted under conditions - V
SUP
From 5.5 V to 18 V and T
J
from -40°C to 125°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at
T
A
= 25°
C under nominal conditions unless otherwise noted.
Description
Symbol
Min
Typ
Max
Unit
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