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參數(shù)資料
| 型號： | MCR100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| 中文描述： | 敏感柵硅（可控硅整流管控整流器） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MCR100 |
MCR100 Series
http://onsemi.com
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
75
200
°
C/W
Lead Solder Temperature
(
1/16
″
from case, 10 secs max)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
T
C
= 25
°
C
T
C
= 110
°
C
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1 k )
ON CHARACTERISTICS
I
DRM
, I
RRM
10
100
A
Peak Forward OnState Voltage
*
(I
TM
= 1.0 A Peak @ T
A
= 25
°
C)
V
TM
1.7
V
Gate Trigger Current (Continuous dc) (Note 3)
(V
AK
= 7.0 Vdc, R
L
= 100 )
Holding Current
(2)
(V
AK
= 7.0 Vdc, Initiating Current = 20 mA)
T
C
= 25
°
C
I
GT
40
200
A
T
C
= 25
°
C
T
C
= 40
°
C
I
H
0.5
5.0
10
mA
Latch Current
(V
AK
= 7.0 V, Ig = 200 A)
T
C
= 25
°
C
T
C
= 40
°
C
I
L
0.6
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note 3)
(V
AK
= 7.0 Vdc, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
V
GT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1000 ,T
J
= 110
°
C)
dV/dt
20
35
V/ s
Critical Rate of Rise of OnState Current
(I
PK
= 20 A; Pw = 10 sec; diG/dt = 1 A/ sec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
≤
1.0 ms, Duty Cycle
≤
1%.
2. R
GK
= 1000 included in measurement.
3. Does not include R
GK
in measurement.
di/dt
50
A/ s
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR100_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR100_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Thick film rectangular Low resistance series |
| MCR100_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR100_2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR100-003 | 功能描述:SCR 100V 800mA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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