- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385575 > MCR100 (ON SEMICONDUCTOR) Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MCR100 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| 中文描述： | 敏感柵硅（可控硅整流管控整流器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 65K |
| 代理商： | MCR100 |
MCR100 Series
http://onsemi.com
2
ORDERING INFORMATION
Device
Package Code
Shipping
MCR100003
MCR100004
5000 Units / Bulk
MCR100006
MCR100008
MCR1003RL
TO 92 (TO 226)
TO92 (TO226)
MCR1006RL
2000 Units / Tape & Reel
MCR1006RLRA
MCR1006RLRM
2000 Units / Tape & Ammunition Box
MCR1006ZL1
MCR1008RL
2000 Units / Tape & Reel
MCR100003G
MCR100006G
5000 Units / Bulk
MCR100008G
MCR1003RLG
TO 92 (TO 226)
TO92 (TO226)
(PbFree)
2000 Units / Tubes
MCR1006RLG
MCR1006RLRAG
2000 Units / Tape & Reel
MCR1006RLRMG
2000 Units / Tape & Ammunition Box
MCR1006ZL1G
MCR1008RLG
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2000 Units / Tape & Reel
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
=
40 to 110
°
C, Sine Wave, 50 to 60 Hz; Gate Open)
MCR1003
MCR1004
MCR1006
MCR1008
V
DRM,
V
RRM
100
200
400
600
V
On-State RMS Current, (T
C
= 80
°
C) 180
°
Conduction Angles
I
T(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T
J
= 25
°
C)
I
TSM
I
2
t
10
A
Circuit Fusing Consideration, (t = 8.3 ms)
0.415
A
2
s
Forward Peak Gate Power, (T
A
= 25
°
C, Pulse Width
1.0 s)
P
GM
0.1
W
Forward Average Gate Power, (T
A
= 25
°
C, t = 8.3 ms)
P
G(AV)
0.10
W
Forward Peak Gate Current, (T
A
= 25
°
C, Pulse Width
1.0 s)
I
GM
1.0
A
Reverse Peak Gate Voltage, (T
A
= 25
°
C, Pulse Width
1.0 s)
V
GRM
5.0
V
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
40 to 110
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
T
stg
40 to 150
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR12DSM | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12DSN | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LD | Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LM | Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LN | Silicon Controlled Rectifiers(可控硅整流管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR100_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR100_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Thick film rectangular Low resistance series |
| MCR100_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR100_2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Ohmic Thick Film Chip Resistors |
| MCR100-003 | 功能描述:SCR 100V 800mA RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。