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參數(shù)資料
| 型號： | MCR12DSM |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| 中文描述： | 敏感柵硅（可控硅整流管控整流器） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MCR12DSM |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 4
1
Publication Order Number:
MCR12DSM/D
MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
= 40 to 110
°
C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DSM
MCR12DSN
V
DRM,
V
RRM
600
800
V
OnState RMS Current
(180
°
Conduction Angles; T
C
= 75
°
C)
I
T(RMS)
12
A
Average OnState Current
(180
°
Conduction Angles; T
C
= 75
°
C)
I
T(AV)
7.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 110
°
C)
I
TSM
100
A
Circuit Fusing Consideration (t = 8.3 msec)
I
2
t
41
A
2
sec
Forward Peak Gate Power
(Pulse Width
≤
1.0 sec, T
C
= 75
°
C)
P
GM
5.0
W
Forward Average Gate Power
(t = 8.3 msec, T
C
= 75
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤
1.0
sec, T
C
= 75
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to 110
°
C
Storage Temperature Range
T
stg
40 to 150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
SCRs
12 AMPERES RMS
600 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK3
CASE 369D
STYLE 4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
Y
WW
R12DSx
= Year
= Work Week
= Device Code
x= M or N
= PbFree Package
G
1 2
3
4
YWW
R1
2DSxG
1
23
4
YWW
R1
2DSxG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR12DSN | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LD | Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LM | Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12LN | Silicon Controlled Rectifiers(可控硅整流管) |
| MCR12 | Silicon Controlled Rectifiers( 可控硅整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR12DSMT4 | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DSMT4G | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DSN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR12DSN-001 | 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DSN-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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