- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383556 > MC-458DA726 (NEC Corp.) 8M-Word By72-BIT Dynamic RAM Module(8M×72位動態(tài)RAM模塊) PDF資料下載
Data Sheet M13202EJ3V0DS00
7
MC-458DA726
[MC-458DA726LF]
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1, t
RC
≥
t
RC(MIN.)
,
/CAS latency = 2
-A80
1,020
mA
1
I
O
= 0
mA
-A10
930
/CAS latency = 3
-A80
1,065
-A10
975
Precharge standby current in I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
259
mA
power down mode
I
CC2
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
21
Precharge standby current in
non power down mode
I
CC2
N CKE
≥
V
IH (MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH (MIN.)
,
Input signals are changed one time during 30
ns.
430
mA
I
CC2
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
, Input signals are stable.
54
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
295
mA
power down mode
I
CC3
PS CKE
≤
V
IL(MAX.)
, t
CK
=
∞
36
Active standby current in
I
CC3
N CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
475
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
, Input signals are stable.
135
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
, I
O
= 0
mA
/CAS latency = 2
-A80
1,245
mA
2
(Burst mode)
-A10
1,020
/CAS latency = 3
-A80
1,425
-A10
1,245
CBR (Auto) refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
-A80
1,470
mA
3
-A10
1,470
/CAS latency = 3
-A80
1,515
-A10
1,515
Self refresh current
I
CC6
CKE
≤
0.2
V
259
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
10
+
10
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–
1.5
+
1.5
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4. 0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-45D16CA721KF-C75 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641KF-C75 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C80 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641KF-C80 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC459 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 wide 3-2-2-3 input expander for and-or-invert gae |
| MC-45D16CA721 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C75 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。