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參數(shù)資料
| 型號： | MC-45D16CB641KF-C75 |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 中文描述： | 16米字的64位DDR同步動態(tài)RAM模塊無緩沖型 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 241K |
| 代理商： | MC-45D16CB641KF-C75 |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS INTEGRATED CIRCUIT
MC-45D16CA721
Document No. M14898EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
The mark
#
shows major revised points.
Description
The MC-45D16CA721 is a 16,777,216 words by 72 bits DDR synchronous dynamic RAM module on which 9 pieces
of 128M DDR SDRAM:
μ
PD45D128842 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC type)
Clock frequency
Part number
/CAS latency
Clock frequency
Module type
(MAX.)
MC-45D16CA721KF-C75
CL = 2.5
133
MHz
DDR SDRAM
CL = 2
100 MHz
Unbuffered DIMM
MC-45D16CA721KF-C80
CL = 2.5
125 MHz
Design specification
CL = 2
100 MHz
Rev.0.9 compliant
Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge
Double Data Rate interface
Differential CLK (/CLK) input
Data inputs and DM are synchronized with both edges of DQS
Data outputs and DQS are synchronized with a cross point of CLK and /CLK
Quad internal banks operation
Possible to assert random column address in every clock cycle
Programmable Mode register set
/CAS latency (2, 2.5)
Burst length (2, 4, 8)
Wrap sequence (Sequential
/
Interleave)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
2.5 V
±
0.2 V Power supply for V
DD
2.5 V
±
0.2 V Power supply for V
DD
Q
SSTL_2 compatible with all signals
4,096 refresh cycles / 64
ms
Burst termination by Precharge command and Burst stop command
184-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
相關PDF資料 |
PDF描述 |
|---|---|
| MC-45D16CA721KF-C80 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641KF-C80 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D32CC721KFA-C75 | 32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MC-45D16CB641KF-C80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CD641KS | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16CD641KS-C75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16CD641KS-C80 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-45D16DA721 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
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