參數(shù)資料
型號: MC-458CD64S
廠商: NEC Corp.
英文描述: Synchronous Dynamic RAM Module(同步動態(tài)RAM 模塊)
中文描述: 同步動態(tài)隨機(jī)存儲器模塊(同步動態(tài)內(nèi)存模塊)
文件頁數(shù): 1/16頁
文件大小: 204K
代理商: MC-458CD64S
The information in this document is subject to change without notice.
1997
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CD64S
8M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M13041EJ4V0DS00 (4th edition)
Date Published September 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on
which 8 pieces of 64M SDRAM:
μ
PD4564163 (Revision E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and Clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-458CD64S-A80
CL = 3
125
MHz
6
ns
3,168
mW
14.4
mW
CL = 2
100
MHz
6
ns
2,736 mW
(CMOS level input )
MC-458CD64S-A10
CL = 3
100 MHz
6
ns
2,736
mW
CL = 2
77 MHz
7
ns
2,232 mW
MC-458CD64S-A10B
CL = 3
100 MHz
7
ns
2,736
mW
CL = 2
67 MHz
8
ns
1,944 mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
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