參數(shù)資料
型號(hào): MC-458CB64S
廠商: NEC Corp.
英文描述: Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM模塊)
中文描述: 同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊(同步動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 6/20頁(yè)
文件大?。?/td> 196K
代理商: MC-458CB64S
6
MC-458CB64S
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
[MC-458CB64S]
Parameter
Symbol
Test condition
MIN.
MAX.
Unit Notes
-A10
640
mA
1
/CAS latency = 2
-A12
520
-A10
680
Operating current
I
CC1
Burst length
=
1, t
RC
t
RC(MIN.)
I
O
= 0
mA
/CAS latency = 3
-A12
560
Precharge standby current
I
CC2
P
CKE
V
IL(MAX.)
, t
CK
=
15
ns
24
mA
in power down mode
I
CC2
PS
CKE
V
IL(MAX.)
, t
CK
=
16
Precharge standby current
in non power down mode
I
CC2
N
CKE
V
IH(MIN.)
, t
CK
=
15
ns, /CS
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
160
mA
I
CC2
NS
CKE
V
IH(MIN.)
, t
CK
=
, Input signals are stable.
48
Active standby current in
I
CC3
P
CKE
V
IL(MAX.)
, t
CK
=
15
ns
40
mA
power down mode
I
CC3
PS
CKE
V
IL(MAX.)
, t
CK
=
32
Active standby current in
I
CC3
N
mA
non power down mode
CKE
V
IH(MIN.)
, t
CK
=
15
ns, /CS
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
200
I
CC3
NS
CKE
V
IH(MIN.)
, t
CK
=
, Input signals are stable.
80
Operating current
I
CC4
t
CK
t
CK(MIN.)
/CAS latency = 2
-A10
640
mA
2
(Burst mode)
I
O
= 0
mA
-A12
560
/CAS latency = 3
-A10
840
-A12
760
Refresh current
I
CC5
t
RC
t
RC(MIN.)
/CAS latency = 2
-A10
1,040
mA
3
-A12
760
/CAS latency = 3
-A10
1,080
-A12
800
Self refresh current
I
CC6
CKE
0.2
V
16
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
40
+
40
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
5
+
5
μ
A
High level output voltage
V
OH
I
O
=
2.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
2.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
相關(guān)PDF資料
PDF描述
MC-458CD64S Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊)
MC-458DA726 8M-Word By72-BIT Dynamic RAM Module(8M×72位動(dòng)態(tài)RAM模塊)
MC-45D16CA721KF-C75 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CB641KF-C75 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C80 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC458CB64SAA10B 制造商:NEC Electronics Corporation 功能描述:
MC459 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 wide 3-2-2-3 input expander for and-or-invert gae
MC-45D16CA721 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C75 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-45D16CA721KF-C80 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE