- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383556 > MC-458CB64PSB-A10B (NEC Corp.) 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM PDF資料下載
參數(shù)資料
| 型號： | MC-458CB64PSB-A10B |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 800萬字，64位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊以便內(nèi)存 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 126K |
| 代理商： | MC-458CB64PSB-A10B |
Data Sheet M12263EJAV0DS00
6
MC-458CB64ESB, 458CB64PSB
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1, t
RC
≥
t
RC(MIN.)
/CAS latency = 2
440
mA
1
I
O
= 0
mA
/CAS latency = 3
440
Precharge standby current
I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
4
mA
in power down mode
I
CC2
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
4
Precharge standby current
I
CC2
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
80
mA
in non power down mode
I
CC2
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
32
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
20
mA
power down mode
I
CC3
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
16
Active standby current in
I
CC3
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
120
mA
non power down mode
I
CC3
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
80
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
, I
O
= 0
mA
/CAS latency = 2
400
mA
2
(Burst mode)
/CAS latency = 3
560
CBR (Auto) refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
880
mA
3
/CAS latency = 3
880
Self refresh current
I
CC6
CKE
≤
0.2
V
8
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
4
+
4
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–
1.5
+
1.5
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-458CB64S | Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM模塊) |
| MC-458CD64S | Synchronous Dynamic RAM Module(同步動(dòng)態(tài)RAM 模塊) |
| MC-458DA726 | 8M-Word By72-BIT Dynamic RAM Module(8M×72位動(dòng)態(tài)RAM模塊) |
| MC-45D16CA721KF-C75 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641KF-C75 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC458CB64SAA10B | 制造商:NEC Electronics Corporation 功能描述: |
| MC459 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 wide 3-2-2-3 input expander for and-or-invert gae |
| MC-45D16CA721 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C75 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。