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參數(shù)資料
| 型號： | MB81ES653225-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Consumer/Embedded Application Specific Memory for SiP |
| 中文描述： | 消費/嵌入式SIP應(yīng)用程序特定的內(nèi)存 |
| 文件頁數(shù)： | 41/44頁 |
| 文件大?。?/td> | 485K |
| 代理商： | MB81ES653225-12 |
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MB81ES653225-12/-12L
41
14. WRITE WITH AUTO-PRECHARGE (EXAMPLE @ CL
=
2, BL
=
2, Applied to same bank)
*1, *2, *3
15. AUTO-REFRESH TIMING
CLK
Command
ACTV
DQ
31
to DQ
0
DQM
3
to DQM
0
ACTV
WRITA
NOP
BL
+
t
RP
(Min)
*5
t
RAS
(Min)
t
DAL
(Min)
1 clock
*4
D1
D2
*1 : Even if the final data is masked by DQM, the precharge does not start the clock of final data input.
*2 : Once auto precharge command is asserted, no new command within the same bank can be issued.
*3 : Auto-precharge command doesn’t affect at full column burst operation except Burst READ & Single Write.
*4 : Precharge at write with Auto-precharge is started after 1 clock at CL
=
2 (-12) , 2 clock at CL
=
2 (-12L) and
CL
=
3 from the end of burst.
*5 : Next command should be issued after BL
+
t
RP
(min) at CL
=
2 (-12) , BL
+
1
+
t
RP
(min) at CL
=
2 (-12L) and
CL
=
3 from WRITA command.
REF
1
H or L
2
H or L
2
REF
NOP
3
t
RC
(Min)
t
RC
(Min)
NOP
3
COMMAND
4
CLK
Command
BA
BA
*1 : All banks should be precharged prior to the first Auto-refresh command (REF) .
*2 : Bank select is ignored at REF command. The refresh address and bank select are selected by internal
refresh counter.
*3 : Either NOP or DESL command should be asserted during t
RC
period while Auto-refresh mode.
*4 : Any activation command such as ACTV or MRS command other than REF command should be asserted
after t
RC
from the last REF command.
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