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參數(shù)資料
| 型號(hào)： | MB81ES653225-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Consumer/Embedded Application Specific Memory for SiP |
| 中文描述： | 消費(fèi)/嵌入式SIP應(yīng)用程序特定的內(nèi)存 |
| 文件頁數(shù)： | 11/44頁 |
| 文件大?。?/td> | 485K |
| 代理商： | MB81ES653225-12 |
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MB81ES653225-12/-12L
11
*1 : All command entries assume the CKE was High during the proceeding clock cycle and the current clock cycle.
After illegal commands are asserted, following command function and data could not be guaranteed.
If used, power up sequence be asserted after power shout down.
*2 : Illegal to bank in the specified state; entry may be legal in the bank specified by BA, depending on the state
of that bank.
*3 : Illegal if any bank is not idle.
*4 : Must satisfy bus contention, bus turn around, and/or write recovery requirements.
Refer to “11. READ INTERRUPTED BY PRECHARGE (EXAMPLE @ CL
=
2, BL
=
4) ” and “12. WRITE
TO READ TIMING (EXAMPLE @ CL
=
2, BL
=
4) ” in section “
■
TIMING DIAGRAMS”.
*5 : NOP to bank precharging or in idle state. May precharge bank specified by BA (and AP) .
*6 : SELF command should only be issued after the last read data have been appeared on DQ.
*7 : MRS command should only be issued on condition that all DQ are in Hi-Z.
*8 : BST command should only be issued with CKE
=
“H”.
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| MB81ES653225-12L | Consumer/Embedded Application Specific Memory for SiP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB81ES653225-12L | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Consumer/Embedded Application Specific Memory for SiP |
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| MB81F161622C-70FN | 制造商:FUGITSU 功能描述:DRAM (DYNAMIC RAM) |
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