參數(shù)資料
型號(hào): MB81ES653225-12
廠商: Fujitsu Limited
英文描述: Consumer/Embedded Application Specific Memory for SiP
中文描述: 消費(fèi)/嵌入式SIP應(yīng)用程序特定的內(nèi)存
文件頁(yè)數(shù): 39/44頁(yè)
文件大?。?/td> 485K
代理商: MB81ES653225-12
MB81ES653225-12/-12L
39
10. WRITE INTERRUPTED BY PRECHARGE (EXAMPLE @ CL
=
2)
11. READ INTERRUPTED BY WRITE (EXAMPLE @ CL
=
2, BL
=
4)
CLK
Command
DQ
31
to DQ
0
PRE
t
DPL
(Min)
t
RP
(Min)
DATA-IN
LAST
DATA-IN
MASKED
by Precharge
ACTV
Note : The precharge command (PRE) should only be issued after the t
DPL
of final data input is satisfied.
PRE means ’PRE’ or ’PALL.
CLK
Command
DQM
3
to DQM
0
DQ
31
to DQ
0
READ
WRIT
I
DQZ
(2 clocks)
Masked
Q1
D1
D2
I
OWD
(2 clocks)
I
DWD
(same clock)
1
2
3
*1 : First DQM makes high-impedance state High-Z between last output and first input data.
*2 : Second DQM makes internal output data mask to avoid bus contention.
*3 : Third DQM also makes internal output data mask. If burst read ends (final data output) at or after the second
clock of burst write, this third DQM is required to avoid internal bus contention.
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