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參數(shù)資料
| 型號： | MAS110S |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Fast Turn-off Asymmetric Thyristor/Diode Module |
| 中文描述： | 快速關斷不對稱晶閘管/二極管模塊 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 67K |
| 代理商： | MAS110S |
MAS110S
3/9
DIODE CURRENT RATINGS
Symbol
Parameter
Conditions
Units
Max.
I
T(AV)
Mean forward current
I
T(RMS)
RMS value
Half wave resistive load, T
case
= 75
o
C
112
A
T
case
= 75
o
C
175
A
DIODE SURGE RATINGS - PER ARM
Conditions
10ms half sine; T
case
= 130
o
C
V
R
= 0% V
RRM
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
61.25 x 10
3
A
2
s
3.5
kA
Conditions
At 600A, T
case
= 25C.
Max.
Units
Symbol
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
70
mA
2.65
V
At V
RRM
, T
case
= 125C.
t
rr
Reverse recovery time
1.3
μ
s
T
case
= 125C, dI
R
/dt = -50V/
μ
s, I
FM
= 200A
V
TO
Threshold voltage
1.6
V
At T
vj
= 125C.
Forward slope resistance
1.5
m
At T
vj
= 125C.
r
T
DIODE DYNAMIC CHARACTERISTICS
THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 30
I
GT
Gate trigger current
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
-
P
G(AV)
Mean gate power
-
4.0
V
-
250
mA
-
7.0
V
-
10
A
-
50
W
-
15
W
Typ.
Max.
Units
Average timing = 10ms
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