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參數(shù)資料
| 型號(hào)： | MAS110S |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Fast Turn-off Asymmetric Thyristor/Diode Module |
| 中文描述： | 快速關(guān)斷不對(duì)稱(chēng)晶閘管/二極管模塊 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | MAS110S |
MAS110S
2/9
THYRISTOR SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 0% V
DRM
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
20.0 x 10
3
A
2
s
2.0
kA
THYRISTOR DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 25
o
C
I
DRM
Peak off-state current
At V
DRM
, T
case
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.9
V
-
70
mA
-
1000
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Rate of rise of on-state current
dI/dt
From 67% V
to 600A,
Gate source 20V, 20
t
r
= < 0.5
μ
s, T
j
= 125C
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.6
-
V
-
1.4
m
Turn-off time
t
q
μ
s
10
-
μ
s
12
-
μ
s
15
-
I
T
= 100A, T
j
= 125C,
dI
R
/dt = 30A/
μ
s, V
GK
= 0V
dV/dt = 20V/
μ
s to 60%
V
DRM
, V
R
= 1V.
t
q
code: W
t
q
code: S
t
q
code: X
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