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參數(shù)資料
| 型號： | M8803F3Y-90K1T |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
| 封裝： | PLASTIC, LCC-52 |
| 文件頁數(shù)： | 70/85頁 |
| 文件大?。?/td> | 601K |
| 代理商： | M8803F3Y-90K1T |
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M88 FAMILY
72/85
Table 52A. Progr am, Write and Erase Times (5 V Range)
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
3. If the maximum amount of time has elapsed between successive writes to an EEPR OM page, the transfer of this page data to EE-
PROM cells will begin. Also, bytes cannot be written to a page any faster than the indicated minimum time.
4. These specifications are for writing a page to EEPROM cells.
Table 52B. Program, Write and Erase Times (3 V Range)
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
3. If this amount of time has elapsed between successive writes to an EEPR OM page, the transfer of this page data to EEPROM cells
will begin. Also, bytes cannot be written to a page any faster than the indicated minimum time.
4. These specifications are for writing a page to EEPROM cells.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Flash
Flash Program (Byte)
8.5
s
Flash Bulk Erase1 (Pre-programmed to 00)
330
s
Flash Bulk Erase
10
s
tWHQV3
Sector Erase (Pre-programmed to 00)
1
30
s
tWHQV2
Sector Erase
2.2
s
tWHQV1
Byte Program
14
1200
s
Program / Erase Cycles (per Sector)
100,000
cycles
tWHWLO
Sector Erase Time-Out
100
s
tQ7VQV
Q7 Valid to Output Valid (Data Polling)2
30
ns
EEPROM
tEEHWL
First Write Protect After Power Up
5
ms
tBLC
EEPROM Byte Load Cycle Time3
0.2
120
s
tWCB
EEPROM Byte Write Cycle Time
410
ms
tWCP
EEPROM Page Write Cycle Time4
630
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
Symbol
Parameter
Min.
Typ.
Max.
Unit
Flash
Flash Program (Byte)
8.5
s
Flash Bulk Erase1 (Pre-programmed to 00)
330
s
Flash Bulk Erase
10
s
tWHQV3
Sector Erase (Pre-programmed to 00)
1
30
s
tWHQV2
Sector Erase
2
s
tWHQV1
Byte Program
10
1200
s
Program / Erase Cycles (per Sector)
100,000
cycles
tWHWLO
Sector Erase Time-Out
100
s
tQ7VQV
Q7 Valid to Output Valid (Data Polling)2
ns
EEPROM
tEEHWL
First Write Protect After Power Up
5
ms
tBLC
EEPROM Byte Load Cycle Time3
0.2
120
s
tWCB
EEPROM Byte Write Cycle Time
410
s
tWCP
EEPROM Page Write Cycle Time4
630
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
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