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參數(shù)資料
| 型號： | M59MR032C |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 28/49頁 |
| 文件大?。?/td> | 352K |
| 代理商： | M59MR032C |
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M59MR032C, M59MR032D
28/49
Table 28. DC Characteristics
(T
A
=
–40 to 85°C; V
DD
= V
DDQ
= 1.65V to 2.0V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. V
PP
may be connected to 12V power supply for a total of less than 100 hrs.
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±5
μA
I
CC1
Supply Current
(Asynchronous Read Mode)
E = V
IL
, G = V
IH
, f = 6MHz
10
20
mA
Supply Current
(Synchronous Read Mode
Continuous Burst)
E = V
IL
, G = V
IH
, f = 40MHz
20
30
mA
I
CC2
Supply Current
(Power-down)
RP = V
SS
± 0.2V
2
10
μA
I
CC3
Supply Current (Standby)
E = V
DD
± 0.2V
15
50
μA
I
CC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
20
40
mA
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
30
50
mA
I
PP1
V
PP
Supply Current (Program
or Erase)
V
PP
= 12V ± 0.6V
5
10
mA
I
PP2
V
PP
Supply Current (Standby
or Read)
V
PP
≤
V
CC
0.2
5
μA
V
PP
= 12V ± 0.6V
100
400
μA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage CMOS
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PP
Supply Voltage
Program, Erase
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
PP2
V
PP
Supply Voltage
Double Word Program
11.4
12.6
V
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