參數(shù)資料
型號(hào)： M59DR032F100N1T
廠商： NUMONYX
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 22/38頁(yè)
文件大小： 270K
代理商： M59DR032F100N1T
29/38
M59DR032A, M59DR032B
Table 28. Data Polling and Toggle Bits AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VDD = VDDQ = 1.65V to 2.2V)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
M59DR032
Unit
Min
Max
tWHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
200
s
Write Enable High to DQ7 Valid (Block Erase, W Controlled)
1.0
10
sec
tEHQ7V
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
200
s
Chip Enable High to DQ7 Valid (Block Erase, E Controlled)
1.0
10
sec
tQ7VQV
Q7 Valid to Output Valid (Data Polling)
0
ns
tWHQV
Write Enable High to Output Valid (Program)
10
200
s
Write Enable High to Output Valid (Block Erase)
1.0
10
sec
tEHQV
Chip Enable High to Output Valid (Program)
10
200
s
Chip Enable High to Output Valid (Block Erase)
1.0
10
sec
相關(guān)PDF資料
PDF描述
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7918 18 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7915 15 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7910 10 V FIXED NEGATIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR032F100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032F100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032F100ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032F120N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032F120N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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