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參數(shù)資料
| 型號： | M58BW016DB100ZA6T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號，引導塊，突發(fā)3V電源閃存 |
| 文件頁數(shù)： | 62/63頁 |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100ZA6T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
62/63
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
January-2001
-01
First Issue.
05-Jun-2001
-02
Major rewrite and restructure.
15-Jun-2001
-03
Nd and Ne values changed in PQFP80 Package Mechanical Table
17-Jul-2001
-04
PQFP80 Package Outline Drawing and Mechanical Data Table updated
17-Dec-2001
-05
tLEAD removed from Absolute Maximum Ratings (Table 12)
80, 90 and 100ns Speed classes defined (Tables 16, 17, 18, 19 and 20 clarified
accordingly)
Figures 14, 15, 16 and 17 clarified
Temperature range 3 and 6 added
Tables 13, 14, 15, 21 and CFI Tables 26, 27, 28, 29 clarified
Document status changed from Product Preview to Preliminary Data
17-Jan-2002
-06
DC Characteristics I
PP
, I
PP1
and I
DD1
clarified
AC Bus Read Characteristics timing t
GHQZ
clarified
30-Aug-2002
6.1
Revision numbering modified: a minor revision will be indicated by incrementing the
tenths digit, and a major revision, by incrementing the units digit of the previous
version (e.g. revision version 06 becomes 6.0).
References of V
PP
pin used for block protection purposes removed. Figure 9
modified.
4-Sep-2002
7.0
Datasheet status changed from Preliminary Data to full Datasheet.
t
WLWH
parameter modified in Table 19, Asynchronous Write and Latch Controlled
Write AC Characteristics.
13-May-2003
7.1
Revision History moved to end of document. V
PP
clarified in Program and Block
Erase commands and Status Register, V
PP
Status bit. V
PPLK
added to DC
Characteristics Table. Timing T
KHQV
modified.
相關PDF資料 |
PDF描述 |
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| M58BW016DB90T3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90T6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90ZA3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90ZA6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB7D13NS | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Gel-pak, waffle pack, wafer, diced wafer on film |
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