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參數(shù)資料
| 型號： | M58BW016DB100ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁數(shù)： | 26/63頁 |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100ZA6T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
26/63
Register bit 4 is set to '1' if there has been a pro-
gram failure.
Programming aborts if V
PP
drops out of the al-
lowed range or RP goes to V
IL
.
A Read Memory Array command must be issued
to return the memory to read mode before issuing
any other commands. Once the code has been
changed a device reset or power-down will make
the protection active with the new code.
See Appendix B, Figure 25, 26 and 27 for suggest-
ed flowcharts for using the Tuning Protection Pro-
gram command.
Table 9. Commands
Note: 1. X Don’t Care; RA Read Address, RD Read Data, ID Device Code, SRD Status Register Data, PA Program Address; PD Program
Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Burst Configuration Register value, TPA = Tuning
Protection Address, TPC = Tuning Protection Code.
2. Cycles 1 and 2 input the first 32 bits of the code, cycles 3 and 4 the second 32 bits of the code.
Command
C
Bus Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
Op.
Addr.
Data
Op.
Addr.
Data Op.
Addr. Data
Op.
Addr.
Data
Read Memory Array
≥
2 Write
X
FFh
Read
RA
RD
Read Electronic Signature
(Manufacturer Code)
≥
2 Write
X
90h
Read 00000h
20h
Read Electronic Signature
(Device Code)
≥
2 Write
X
90h
Read 00001h
IDh
Read Electronic Signature
(Burst Configuration
Register)
≥
2 Write
X
90h
Read 00005h BCRh
Read Status Register
2
Write
X
70h
Read
X
SRDh
Read Query
≥
2 Write
X
98h
Read
QAh
QDh
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BAh
D0h
Program
2
Write
X
40h
10h
Write
PA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Burst Configuration
Register
2
Write
X
60h
Write
BCRh
03h
Tuning Protection
(2)
Program
4
Write
X
48h
Write
TPAh
TPCh Write
X
48h Write TPAh TPCh
Tuning Protection Unlock
(2)
4
Write
X
78h
Write
TPAh
TPCh Write
X
78h Write TPAh TPCh
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PDF描述 |
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| M58BW016DB90T3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90T6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90ZA3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB90ZA6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
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