參數(shù)資料
型號(hào): M58BW016DB100ZA6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁數(shù): 49/63頁
文件大?。?/td> 895K
代理商: M58BW016DB100ZA6T
49/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
APPENDIX B. FLOW CHARTS
Figure 21. Program Flowchart and Pseudo Code
Note: 1. If an error is found, the Status Register must be cleared before further P/E operations.
Write 40h
AI03850
Start
Write Address
& Data
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1)
Program
Error (1)
Program Command:
– write 40h
– write Address & Data
(memory enters read status
state after the Program command)
do:
– read status register
(E or G must be toggled)
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4 = 1, Program error:
– error handler
YES
End
NO
b1 = 0
Program to Protect
Block Error
If b1 = 1, Program to Protected Block Error:
– error handler
YES
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