參數(shù)資料
型號(hào)： M58BW016DB100ZA6T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述： 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存
文件頁(yè)數(shù)： 1/63頁(yè)
文件大?。?/td> 895K
代理商： M58BW016DB100ZA6T
1/63
May 2003
M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
PE4FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V for Program, Erase and
Read
– V
DDQ
= V
DDQIN
= 2.4V to 3.6V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
I
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
I
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
I
OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6μs
– Common Flash Interface
I
MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
I
LOW POWER CONSUMPTION
– 5μA Typical Deep Power Down
– 60μA Typical Standby
– Automatic Standby after Asynchronous Read
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
Figure 1. Packages
BGA
LBGA80 (ZA)
10 x 8 ball array
PQFP80 (T)
相關(guān)PDF資料
PDF描述
M58BW016DB90T3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB90T6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB90ZA3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB90ZA6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DBT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016DB70T3FF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
M58BW016DB70T3FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
M58BW016DB70ZA3FF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
M58BW016DB70ZA3FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
M58BW016DB7D13NS 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Gel-pak, waffle pack, wafer, diced wafer on film
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