參數(shù)資料
型號: M39832-T12WNE1T
廠商: 意法半導(dǎo)體
英文描述: TRANSZORB, 600W, VR: 25.6V UNIPOLAR, VBR: 28.5V - 31.5V
中文描述: 單芯片8兆1兆x8或512KB的x16閃存和256千位并行EEPROM存儲器
文件頁數(shù): 31/36頁
文件大?。?/td> 253K
代理商: M39832-T12WNE1T
Symbol
Parameter
M39832
Unit
-120
-150
Min
Max
Min
Max
t
WHQ7V1
(2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
10
μ
s
t
WHQ7V2 (2)
Write Enable High to DQ7 Valid
(Sector Erase, W Controlled)
1.5
30
1.5
30
sec
t
EHQ7V1
(2)
Flash Block Enable High to DQ7 Valid
(Program, EF Controlled)
10
10
μ
s
t
EHQ7V2
(2)
Flash Block Enable High to DQ7 Valid
(Sector Erase, EF Controlled)
1.5
30
1.5
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
Notes:
1. All other timings are defined in Read AC Characteristics table.
2. t
WHQ7V
is the Program or Erase time.
Table 16. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 2.7V to 3.6V)
Parameter
M39832
Unit
Min
Typ
Typical after
100k W/E Cycles
Max
Flash array Erase (Preprogrammed)
5
5
sec
Flash array Erase
12
12
sec
Flash array Block Erase
2.4
sec
Parameter Block Erase
2.3
sec
Main Block (32Kb) Erase
2.7
sec
Main Block (64Kb) Erase
3.3
15
sec
Chip Program (Byte)
8
8
sec
Byte Program
10
10
μ
s
Word Program
20
20
μ
s
Program/Erase Cycles (per Block)
100,000
cycles
Table 17. Program, Erase Times and Program, Erase Endurance Cycles (Flash Block)
(T
A
= 0 to 70
°
C; V
CC
= 2.7V to 3.6V)
31/36
M39832
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