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參數(shù)資料
| 型號(hào)： | M368L2923BUM-LC4 |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 359K |
| 代理商： | M368L2923BUM-LC4 |
DDR SDRAM
Revision 1.1 November. 2004
256MB, 512MB, 1GB Unbuffered DIMM Pb-Free
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70
°C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal VDD of 2.5V)
VDD
2.5
2.7
5
I/O Supply voltage
VDDQ
2.5
2.7
V
5
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
Input leakage current
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
IOH
-16.8
mA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9mA
1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
5. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20MHz. Any noise above 20MHz at the DRAM
generated from any source other than the DRAM itself may not exceed the DC voltage range of 2.6V +/-100mV.
Note :
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M368L2923BUM-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L2923BUN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L2923BUN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L2923CUN-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L2923DUN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
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