參數(shù)資料
型號： M368L2923BUM-LC4
元件分類： DRAM
英文描述： 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
封裝： DIMM-184
文件頁數(shù)： 17/23頁
文件大小： 359K
代理商： M368L2923BUM-LC4
DDR SDRAM
Revision 1.1 November. 2004
256MB, 512MB, 1GB Unbuffered DIMM Pb-Free
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Ordering Information
Operating Frequencies
Part Number
Density
Organization
Component Composition
Height
M368L3324BUM-C(L)CC/C4
256MB
32M x 64
32Mx16( K4H511638B) * 4EA
1.250(mil)
M368L6523BUM-C(L)CC/C4
512MB
64M x 64
64Mx8( K4H510838B) * 8EA
1.250(mil)
M381L6523BUM-C(L)CC/C4
512MB
64M x 72
64Mx8( K4H510838B) * 9EA
1.250(mil)
M368L2923BUM-C(L)CC/C4
1GB
128M x 64
64Mx8( K4H510838B) * 16EA
1.250(mil)
M381L2923BUM-C(L)CC/C4
1GB
128M x 72
64Mx8( K4H510838B) * 18EA
1.250(mil)
CC(DDR400@CL=3)
C4(DDR400@CL=3)
Speed @CL3
200MHz
CL-tRCD-tRP
3-3-3
3-4-4
Feature
Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil), single (256MB,512MB) and double(1GB) sided
SSTL_2 Interface
Pb-Free
RoHS compliant
184Pin Unbuffered DIMM based on 512Mb B-die (x8/x16)
相關(guān)PDF資料
PDF描述
M368L2923DUN-CB3 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
M368L2923DUN-CCC DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
M368L2923BUN-CB3 Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
M368L6523BTN-CB0 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
M36LLR8860B1ZAQT SPECIALTY MEMORY CIRCUIT, PBGA88
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M368L2923BUM-LCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L2923BUN-CB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L2923BUN-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L2923CUN-CLCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module
M368L2923DUN 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
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