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參數(shù)資料
23
ELECTRICAL CHARACTERISTICS
23-19
32192/32195/32196 Group Hardware Manual
Rev.1.10 REJ09B0123-0110 Apr.06.07
23.7 Flash Memory Related Characteristics
Symbol
Parameter
Test Condition
Rated Value
Unit
MIN
TYP
MAX
Topr
M3219xF8VFP, M32195F4VFP
-40
125
°C
for Flash rewriting
M3219xF8UFP, M32195F4UFP
-40
105
M3219xF8TFP, M32195F4TFP
-40
85
cycle
Number of times for
Standard goods
100
times
Flash rewriting(Note1)
(Note 2)
Note 1: Writing time for every 4 half word.
23.8 External Capacitance for Power Supply
Note 1: Definition of the number of times for Flash rewriting
The number of times for Flash rewriting is the number of times for erase for each blocks. When the number of times is
100, it can be erase 100 times for each blocks. However, for ine erase it can not be writed in the same adress two or
more times(forbiddance of overwriting).
Note 2: It is the minimum number of times which guarantees all the characteristics after program/erase (guarantee is the
range from "1" to "minimum" value.
(1)Standard goods (The number of times for Flash rewriting is 100)
Symbol
Parameter
Test Condition
Rated Value
Unit
MIN
TYP
MAX
tPRG
Program time (Note 1)
4 KByte block
till 100 times
200
1600
s
Other than 4 KByte block till 100 times
100
800
s
4 KByte block
till 100 times
0.3
6
s
8 KByte block
till 100 times
0.3
6
s
TBERS Block erase time
16 KByte block
till 100 times
0.5
6
s
32 KByte block
till 100 times
0.7
6
s
64 KByte block
till 100 times
1.2
6
s
Symbol
Parameter
Rated Value
Unit
MIN
TYP
MAX
EXCVCC
External capacity connestion pins
1
10
F
EXCVDD
External capacity connestion pins
110
F
for inside internal Ram power supply
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