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參數(shù)資料
| 型號(hào)： | M11L416256SA-35TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 35 ns, PDSO40 |
| 封裝： | 0.400 INCH, LEAD FREE, SOJ-40 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大小： | 280K |
| 代理商： | M11L416256SA-35TG |
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EliteMT
M11L416256SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Operating Temperature, T
A
(ambient) ….0
to +70
C
°
C
°
Storage Temperature (plastic) ……….-55
to +150
C
°
C
°
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
C
°
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
T
A
70
; V
CC
= 3.3V
≤
≤
C
°
±
10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Supply Voltage
V
CC
3.0
3.6
V
1
Supply Voltage
V
SS
0
0
V
Input High Voltage
V
IH
2.0
V
CC
+0.3
V
1
Input Low Voltage
V
IL
-0.3
0.8
V
1
Input Leakage Current
0V
0V
Output(s) disable
I
OH
= -2 mA
V
IN
V
OUT
V
IH
(max)
V
CC
≤
≤
≤
≤
I
LI
-10
10
μ
A
Output Leakage Current
I
LO
-10
10
μ
A
Output High Voltage
V
OH
2.4
-
V
Output Low Voltage
I
OL
= 2 mA
V
OL
-
0.4
V
Note : 1.All Voltages referenced to V
SS
MAX
PARAMETER
CONDITIONS
SYMBOL
-35
UNITS NOTES
Operating Current
RAS
,
CAS
cycling , t
RC
=min
I
CC1
150
mA
1,2
TTL interface ,
RAS
,
CAS
= V
IH
,
D
OUT
=High-Z
4
mA
Standby Current
CMOS interface,
RAS
,
CAS
≥
V
CC
-0.2V
I
CC2
2
mA
RAS
only refresh Current
t
RC
= min
I
CC3
150
mA
2
EDO Page Mode Current
t
PC
= min
I
CC4
150
mA
1,3
Standby Current
RAS
=V
IH
,
CAS
= V
IL
I
CC5
5
mA
1
CAS
Before
RAS
Refresh
Current
Battery Backup Current
(S-ver. only)
t
RC
= min
I
CC6
150
mA
RAS
,
CAS
≤
0.2V, D
OUT
= High-Z,
CMOS interface
I
CC7
400
μ
A
Self Refresh Current
(S-ver. only)
RAS
=
CAS
= V
IL
,
WE =
OE
= A0~A8 = V
CC
-0.2 or 0.2V
DQ0~DQ15 = V
CC
-0.2, 0.2V or open
I
CC8
400
μ
A
Note
:
1. I
CC
max is specified at the output open condition.
2. Address can be changed twice or less while
RAS
=V
IL .
3. Address can be changed once or less while
CAS
=V
IH
.
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
3/16
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