參數(shù)資料
型號: M11L416256SA-35TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 256 K x 16 DRAM EDO PAGE MODE
中文描述: 256K X 16 EDO DRAM, 35 ns, PDSO40
封裝: 0.400 INCH, LEAD FREE, SOJ-40
文件頁數(shù): 11/16頁
文件大?。?/td> 280K
代理商: M11L416256SA-35TG
EliteMT
M11L416256SA
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
(Psuedo READ-MODIFY-WRITE)
RAS
V
I H
V
I L
V
I H
V
I L
V
I H
V
I L
AD DR
V
I H
V
I L
W E
V
I / O H
V
I / O L
I/O
V
I H
V
I L
OE
RAS
CASL,CASH
AD DR
DON'T CARE
UNDEFINED
V
I H
V
I L
V
I H
V
I L
V
I H
V
I L
V
O H
V
O L
I/O
t
R P
ROW
t
C R P
t
C P
t
C A S
t
P C
t
R A H
t
A S C
t
C A H
t
R AD
t
A R
t
RC D
ROW
t
A S R
t
C AH
t
AS C
t
C AH
t
AS C
t
C S H
COLU MN(B )
t
C P
t
C A S
t
C P
CO LU M N (N )
t
R AL
t
C A S
t
C P
COLU MN(A )
t
R C S
t
RC H
t
W C S
V A L I D
t
C A C
t
R AC
t
A A
t
C AC
t
C O H
t
AS R
t
A A
t
W H Z
OPEN
t
O AC
t
D S
t
R AS C
t
W C H
V A L I D
VALID DATA(A)
t
D H
t
R S H
t
R A S
t
R C
t
R P C
t
C R P
ROW
ROW
t
R A H
OPEN
t
AC P
t
R P
CASL,CASH
RASONLY REFRESH CYCLE
(ADDR = A0~A8 ; OE ,
WE
= DON’T CARE)
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
11/16
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