參數(shù)資料
型號(hào): M11L416256SA-35TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 256 K x 16 DRAM EDO PAGE MODE
中文描述: 256K X 16 EDO DRAM, 35 ns, PDSO40
封裝: 0.400 INCH, LEAD FREE, SOJ-40
文件頁數(shù): 14/16頁
文件大?。?/td> 280K
代理商: M11L416256SA-35TG
EliteMT
M11L416256SA
PACKING DIMENSIONS
40-LEAD SOJ(400mil)
SECTION I
40
21
1
20
D
E
1
E
Seating Plain
A
2
b
2
b
0
e
E
2
0.024" Min.
A
1
A
θ
1
R
1
c
Detail "A"
Detail "A"
SECTION II
40
21
1
20
D
E
1
E
Seating Plain
A
2
b
2
b
0
e
E
2
0.024" Min.
A
1
A
θ
1
R
1
c
Detail "A"
Detail "A"
Symbol
A
A
1
A
2
b
b
2
c
e
Dimension in mm
Min
Norm
3.250
3.510
2.080
2.790 REF
0.380
0.460
0.635 REF
0.180
0.250
1.270 BSC
Dimension in inch
Min
Norm
0.128
0.138
0.082
0.110 REF
0.015
0.018
0.025 REF
0.007
0.010
0.050 BSC
Symbol
E
E
1
E
2
R
1
θ
1
D
Dimension in mm
Min
Norm
10.920
11.176
10.030
10.160
9.40 BSC
0.760
0.890
°
0
25.91
26.040
Dimension in inch
Min
Norm
0.430
0.440
0.395
0.400
0.370 BSC
0.030
0.035
°
0
1.02
1.025
Max
3.760
Max
0.148
Max
11.430
10.290
Max
0.450
0.405
0.560
0.022
1.020
°
10
26.290
0.040
10
1.035
°
0.360
0.014
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
14/16
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