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參數(shù)資料
| 型號(hào)： | M11B416256A-28J |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256畝× 16的DRAM EDO公司頁面模式 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大小： | 375K |
| 代理商： | M11B416256A-28J |
EliteMT
M11B416256A
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
5/15
(Continued)
-25
-28
-30
-35
-40
UNIT Notes
PARAMETER
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
Read Command Setup Time
Read Command Hold Time Reference to
CAS
Read Command Hold Time Reference to
RAS
t
RCS
0
0
0
0
0
ns
15,18
t
RCH
0
0
0
0
0
ns
9,15,19
t
RRH
0
0
0
0
0
ns
9
CAS
to Output in Low-Z
t
CLZ
3
3
3
3
3
ns
20
Output Buffer Turn-off Delay From
CAS
or
RAS
t
OFF1
3
15
3
15
3
15
3
15
3
15
ns
10,17,2
0
Output Buffer Turn-off to
OE
t
OFF2
6
7
8
8
8
ns
17,26
Write Command Setup Time
t
WCS
0
0
0
0
0
ns
11,15,1
8
15,25
Write Command Hold Time
Write Command Hold Time (Reference
to
RAS
)
t
WCH
5
5
5
5
5
ns
t
WCR
22
24
26
30
34
ns
15
Write Command Pulse Width
t
WP
5
5
5
5
5
ns
15
Write Command to
RAS
Lead Time
t
RWL
7
7
8
9
10
ns
15
Write Command to
CAS
Lead Time
t
CWL
5
5
6
7
8
ns
15,19
Data-in Setup Time
t
DS
t
DH
0
5
0
5
0
5
0
5
0
5
ns
ns
12,20
12,20
Data-in Hold Time
Data-in Hold Time (Reference to
RAS
)
t
DHR
22
24
26
30
34
ns
RAS
to
WE
Delay Time
t
RWD
34
38
46
51
56
ns
11
Column Address to
WE
Delay Time
t
AWD
21
25
31
34
36
ns
11
CAS
to
WE
Delay Time
t
CWD
17
19
25
26
27
ns
11,18
Transition Time (rise or fall)
t
T
t
REF
1.5
50
8
1.5
50
8
1.5
50
8
2.5
50
8
2.5
50
8
ns
ms
2,3
Refresh Period (512 cycles)
RAS
to
CAS
Precharge Time
t
RPC
10
10
10
10
10
ns
CAS
Setup Time(CBR REFRESH)
t
CSR
5
5
10
10
10
ns
1,18
CAS
Hold Time(CBR REFRESH)
t
CHR
7
7
10
10
10
ns
1,19
OE
Hold Time From
WE
During
Read-Mode-Write Cycle
t
OEH
4
4
4
4
5
ns
16
OE
Low to
CAS
High Setup Time
t
OES
4
4
4
4
5
ns
OE
High Hold Time From
CAS
High
t
OEHC
2
2
2
2
2
ns
OE
Precharge Time
t
OEP
2
2
2
2
2
ns
OE
Setup Prior to
RAS
During Hidden
Refresh Cycle
t
ORD
0
0
0
0
0
ns
Last
CAS
Going Low to First
CAS
Returning High
t
CLCH
4
5
5
5
6
ns
21
Data Output Hold After
CAS
Returning
Low
t
COH
3
3
3
3
3
ns
Output Disable Delay From
WE
t
WHZ
3
7
3
7
3
7
3
7
3
7
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11B416256A-28T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 256 K x 16 DRAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11B416256A-28T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
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