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參數(shù)資料
| 型號： | M11B416256A-28J |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256畝× 16的DRAM EDO公司頁面模式 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 375K |
| 代理商： | M11B416256A-28J |
EliteMT
M11B416256A
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
3/15
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Operating Temperature, T
A
(ambient) ….0 C
to +70 C
Storage Temperature (plastic) ……….-55 C
to +150 C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0 C
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
≤
T
A
≤
70 C
; V
CC
= 5V
±
10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Supply Voltage
V
CC
4.5
5.5
V
1
Supply Voltage
V
SS
0
0
V
Input High Voltage
V
IH
2.4
V
CC
+0.3
V
1
Input Low Voltage
V
IL
-0.3
0.8
V
1
Input Leakage Current
0V
≤
V
IN
≤
V
IH
(max)
0V
≤
V
OUT
≤
V
CC
Output(s) disable
I
LI
-10
10
μ
A
Output Leakage Current
I
LO
-10
10
μ
A
Output High Voltage
I
OH
= -5 mA
V
OH
2.4
-
V
Output Low Voltage
I
OL
= 4.2 mA
V
OL
-
0.4
V
Note : 1.All Voltages referenced to V
SS
MAX
UNITS NOTES
PARAMETER
CONDITIONS
SYMBOL
-25
-28
-30 -35 -40
Operating Current
RAS
,
CAS
cycling , t
RC
=min
I
CC1
210
190 170 150 135
mA
1,2
TTL interface ,
RAS
,
CAS
= V
IH
,
D
OUT
=High-Z
4
4
4
4
4
mA
Standby Current
CMOS interface,
RAS
,
CAS
≥
V
CC
-0.2V
I
CC2
2
2
2
2
2
mA
RAS
only refresh Current
t
RC
= min
I
CC3
210
190 170 150 135
mA
2
EDO Page Mode Current
t
PC
= min
I
CC4
210
190 170 150 135
mA
1,3
Standby Current
RAS
=V
IH
,
CAS
= V
IL
I
CC5
5
5
5
5
5
mA
1
CAS
Before
RAS
Refresh
Current
t
RC
= min
I
CC6
210
190 170 150 135
mA
Note
:
1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while
RAS
=V
IL .
3. Address can be changed once or less while
CAS
=V
IH
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11B416256A-28T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 256 K x 16 DRAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11B416256A-28T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
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