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| 型號(hào)： | M11B416256A-28J |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256畝× 16的DRAM EDO公司頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大?。?/td> | 375K |
| 代理商： | M11B416256A-28J |
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EliteMT
M11B416256A
Elite Memory Technology Inc
Publication Date
:
Feb. 2004
Revision
:
1.9
4/15
CAPACITANCE
(Ta = 25 C
, V
CC
= 5V
±
10%)
PARAMETER
SYMBOL
TYP
MAX
UNIT
Input Capacitance (address)
C
I1
-
5
pF
Input Capacitance (
RAS
,
CASH
,
CASL
, WE ,
OE
)
C
I2
-
7
pF
Output capacitance (I/O0~I/O15)
C
I / O
-
10
pF
AC ELECTRICAL CHARACTERISTICS
(Ta = 0 to 70 C
, V
CC
=5V
±
10%, V
SS
= 0V) (note 14)
Test Conditions
Input timing reference levels : 0V, 3V
Output reference level : V
OL
= 0.8V, V
OH
=2.0V
Output Load : 2TTL gate + CL (50pF)
Assumed t
T
= 2ns
-25
-28
-30
-35
-40
PARAMETER
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
UNIT Notes
Read or Write Cycle Time
t
RC
43
48
55
65
75
ns
Read Write Cycle Time
t
RWC
65
70
85
95
105
ns
EDO-Page-Mode Read or Write Cycle Time
t
PC
10
11
12
14
16
ns
22
EDO-Page-Mode Read-Write Cycle Time
t
PCM
32
35
37
42
47
ns
22
Access Time From
RAS
t
RAC
25
28
30
35
40
ns
4
Access Time From
CAS
t
CAC
8
9
9
10
11
ns
5,20
Access Time From
OE
t
OAC
8
9
9
10
11
ns
13,20
Access Time From Column Address
t
AA
12
15
15
18
20
ns
Access Time From
CAS
Precharge
t
ACP
14
17
17
20
22
ns
20
RAS
Pulse Width
t
RAS
25
10K
28
10K
30
10K
35
10K
40
10K
ns
RAS
Pulse Width (EDO Page Mode)
t
RASC
25
100K
28
100K
30
100K
35
100K 40 100K
ns
RAS
Hold Time
t
RSH
8
9
9
10
11
ns
25
RAS
Precharge Time
t
RP
15
17
20
25
30
ns
CAS
Pulse Width
t
CAS
4
10K
5
10K
5
10K
5
10K
6
10K
ns
24
CAS
Hold Time
t
CSH
21
24
26
30
35
ns
19
CAS
Precharge Time
t
CP
4
4
4
5
5
ns
6,23
RAS
to
CAS
Delay Time
t
RCD
10
17
10
19
10
21
10
25
10
29
ns
7,18
CAS
to
RAS
Precharge Time
t
CRP
5
5
5
5
5
ns
19
Row Address Setup Time
t
ASR
t
RAH
0
5
0
5
0
5
0
5
0
5
ns
ns
Row Address Hold Time
RAS
to Column Address Delay Time
t
RAD
8
13
8
13
8
15
8
17
8
20
ns
8
Column Address Setup Time
t
ASC
0
0
0
0
0
ns
18
Column Address Hold Time
t
CAH
5
5
5
5
5
ns
18
Column Address Hold Time (Reference to
RAS
)
t
AR
22
24
26
30
34
ns
Column Address to
RAS
Lead Time
t
RAL
12
15
15
18
20
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11B416256A-28T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 256 K x 16 DRAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11B416256A-28T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30J | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-30T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35J | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11B416256A-35T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256 K x 16 DRAM EDO PAGE MODE |
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