- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382262 > LX5506E-LQ (MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP) InGaP HBT 4 ?6GHz Power Amplifier PDF資料下載
參數(shù)資料
| 型號： | LX5506E-LQ |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 衰減器 |
| 英文描述： | InGaP HBT 4 ?6GHz Power Amplifier |
| 中文描述： | 4000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MLPQ-16 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 326K |
| 代理商： | LX5506E-LQ |
LX5506E
P
RELIMINARY
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
W
M
.
C
InGaP HBT 4 – 6GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
Copyright
2000
Rev. 1.0, 2003-01-10
DESCRIPTION
differential output power detector pair
to help reduce BOM cost and PCB
board space for system implementation.
LX5506E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506E an ideal
solution
for
power amplifier requirements for IEEE
802.11a, and Hiperlan2 portable WLAN
applications.
The LX5506E is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.85
GHz frequency range. The PA is
implemented
as
monolithic
microwave
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. The device is manufactured
with an InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) IC process
(MOCVD). It also has an integrated
a
three-stage
integrated
broadband,
high-gain
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
4.9-5.85GHz Operation
Single-Polarity 3.3V Supply
Total Current ~ 200mA for
Pout=19dBm at 5.25GHz
P1dB > +26dBm
Power Gain ~ 23dB at 5.25GHz
& Pout=19dBm
EVM ~ 3% for 64QAM/ 54Mbps
& Pout=19dBm
Integrated Power Detectors
On-Chip Input Match
Simple Output Match
Minimal External Components
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
T
J
(
°
C)
LQ
Plastic MLPQ
16-Pin
LX5506E-LQ
0 to 70
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5506E-LQT)
L
X
5
5
0
6
E
相關PDF資料 |
PDF描述 |
|---|---|
| LX5506M | InGaP HBT 4.5 - 6GHz Power Amplifier |
| LX5510 | InGaP HBT 2.4-2.5 GHz Power Amplifier |
| LX5510-LQ | InGaP HBT 2.4-2.5 GHz Power Amplifier |
| LX5514 | InGaP HBT 2.3 ? 2.5 GHz Power Amplifier |
| LX5514LL | InGaP HBT 2.3 ? 2.5 GHz Power Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LX5506LQ | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506LQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R |
| LX5506M | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
| LX5506M_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4.5 – 6GHz Power Amplifier |
| LX5506MLQ | 制造商:Microsemi Corporation 功能描述:WIRELESS LAN POWER AMPLIFIER - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。