
LX5506M
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2005
Rev. 1.0a, 2005-11-02
W
M
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InGaP HBT 4.5 – 6GHz Power Amplifier
TM
D E S C R I P T I O N
of up to 20% at maximum linear output
power for OFDM mask compliance. It
also features an on-chip output power
detector to help reduce BOM cost and
board space in system implementation.
The on-chip detector allows simple
interface with an external directional
coupler, providing accurate output
power level readings insensitive to
frequency,
temperature,
VSWR.
LX5506M is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506M an ideal
solution
for
power amplifier requirements for IEEE
802.11a, and HyperLAN2 portable
WLAN applications.
The LX5506M is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII)
band,
HyperLAN2,
Japan’s WLAN applications in the
4.9-5.9 GHz frequency range. The PA
is implemented as a three-stage
monolithic
microwave
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. The device is manufactured
with an InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) IC process
(MOCVD). It operates with a single
positive voltage supply of 3.3V
(nominal), with up to +22dBm linear
output power for 802.11a OFDM
spectrum mask compliance, and low
EVM of -30dB for up to +18dBm
output power in the 4.9-5.9GHz band.
LX5506M features high gain of up
to 30dB with low quiescent current of
90mA, and high power added efficiency
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
and
integrated
and
load
broadband,
high-gain
K E Y F E A T U R E S
Broadband 4.9-5.9GHz Operation
Advanced InGaP HBT
Single-Polarity 3.3V Supply
Power Gain ~ 30dB at 5.25GHz
Power Gain > ~28dB Across 4.9-
5.9GHz
EVM ~ -30dB at Pout=+17dBm at
5.25GHz
EVM ~ -30dB at Pout=+18dBm at
5.85GHz
Total Current ~140mA for Pout =
+17dBm at 5.25GHz (For High Duty
Cycle of 90%)
Maximum Linear Power ~ +22dBm
for OFDM Mask Compliance
Maximum Linear Efficiency ~ 20%
On-chip Output Power Detector with
Improved Frequency and Load-
VSWR Insensitivity
On-Chip Input Match
On-Chip RF Decoupling
Simple Output Match for Optimal
Broadband EVM
Small Footprint: 3x3mm
2
Low Profile: 0.9mm
A P P L I C A T I O N S
FCC U-NII Wireless
IEEE 802.11a
HyperLAN2
5GHz Cordless Phone
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
Plastic MLPQ
16 pin
T
J
(
°
C)
RoHS Compliant / Pb-free
0 to 70
LQ
LX5506MLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part
number. (i.e. LX5506MLQ-TR)
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