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參數(shù)資料
| 型號： | LX5510 |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 2.4-2.5 GHz Power Amplifier |
| 中文描述： | 2.4-2.5千兆赫的InGaP HBT功率放大器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 626K |
| 代理商： | LX5510 |
LX5510
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Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2003
Rev. 0.3g, 2003-05-08
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier
I N T E G R A T E D P R O D U C T S
DESCRIPTION
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 120mA total DC
current with the nominal 3.3V bias.
With increased bias of 4.5V EVM is ~
5% at 23dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5510 an ideal
solution
for
amplifier
requirements
802.11b/g applications
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5GHz frequency range. The
PA is implemented as a two-stage
monolithic
microwave
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
(MOCVD). With single low voltage
supply of 3.3V 20dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
integrated
IC
process
medium-gain
power
IEEE
for
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 120mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3x3mm
)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER
INFO
Plastic MLPQ
16 pin
LX5510-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5510-LQT)
LQ
L
X
5
5
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LX5510-LQ | InGaP HBT 2.4-2.5 GHz Power Amplifier |
| LX5514 | InGaP HBT 2.3 ? 2.5 GHz Power Amplifier |
| LX5514LL | InGaP HBT 2.3 ? 2.5 GHz Power Amplifier |
| LX5560 | InGaAs - E-Mode pHEMT Low Noise Amplifier |
| LX5560L | InGaAs - E-Mode pHEMT Low Noise Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LX5510_05 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 a?? 2.5 GHz Power Amplifier |
| LX5510B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| LX5510BLQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 2.5GHZ 16MLPQ - Bulk |
| LX5510BLQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 2.5GHz 6V 16-Pin MLPQ EP T/R |
| LX5510LQ | 制造商:Microsemi Corporation 功能描述:RF Amp Module Single Power Amp 2.5GHz 16-Pin MLPQ EP 制造商:Microsemi Corporation 功能描述:RF AMP MOD SGL PWR AMP 2.5GHZ 16MLPQ - Bulk |
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