參數(shù)資料
型號： LX5514
廠商： Microsemi Corporation
英文描述： InGaP HBT 2.3 ? 2.5 GHz Power Amplifier
中文描述： 的InGaP HBT 2.3？ 2.5 GHz功率放大器
文件頁數(shù)： 1/2頁
文件大小： 96K
代理商： LX5514
LX5514
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2004
Rev. 1.0, 2006-06-21
W
M
.
C
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
TM
D E S C R I P T I O N
The LX5514 is a power amplifier
optimized for WLAN applications in
the 2.3 – 2.5GHz frequency range.
The power amplifier is implemented
as a two-stage monolithic microwave
integrated circuit (MMIC) with active
bias and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
(MOCVD). Power gain of 28dB is
obtained with a low quiescent current
of 80mA.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
IC
process
For 20dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 150mA total DC
current.
The LX5514 is available in a
standard 12-pin 2mm x 2mm micro-
lead package (MLP12L). The compact
footprint, low profile, and thermal
capability of the MLP package make the
LX5514 an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications.
K E Y F E A T U R E S
Advanced InGaP HBT
2.3 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Quiescent Current 80mA
Power Gain 28dB
Total Current 150mA for
P
OUT
=20dBm OFDM
EVM ~3 % 54Mbps / 64QAM
Small Footprint: 2 x 2mm
Low Profile: 0.46mm
A P P L I C A T I O N S
IEEE 802.11b/g
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
LL
12 pin
RoHS Compliant / Pb-free
LX5514LL
Plastic MLPQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5514LL-TR)
L
X
5
5
1
4
相關PDF資料
PDF描述
LX5514LL InGaP HBT 2.3 ? 2.5 GHz Power Amplifier
LX5560 InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5560L InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561 InGaAs - E-Mode pHEMT Low Noise Amplifier
LX5561LL InGaAs - E-Mode pHEMT Low Noise Amplifier
相關代理商/技術參數(shù)
參數(shù)描述
LX5514LL 制造商:Microsemi Corporation 功能描述:WIRELESS LAN POWER AMPLIFIER - Bulk 制造商:Microsemi Corporation 功能描述:LX5514 Series 2.3 to 2.5 GHz 3.3 V 150 mA Surface Mount Power Amplifier -MLPQ-12
LX5514MLL 制造商:Microsemi Corporation 功能描述:LED BACKLIGHT CONTROLLERS AND DRIVERS - Bulk
LX5516 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
LX5516LL 制造商:Microsemi Corporation 功能描述:WIRELESS LAN POWER AMPLIFIER - Bulk
LX5516LLTR 功能描述:IC HBT 2.4GHZ-2.5GHZ PA 12-MLPQ RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*