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參數(shù)資料
| 型號(hào)： | LMX2323TMX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PLL合成/DDS/VCOs |
| 英文描述： | PLL FREQUENCY SYNTHESIZER, 2000 MHz, PDSO16 |
| 封裝： | TSSOP-16 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大小： | 147K |
| 代理商： | LMX2323TMX |
Electrical Characteristics (Continued)
V
CC = 3.3V, VP = 3.3V; 40C < TA < 85C except as specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DIGITAL INTERFACE (DATA, CLK,LE, CE)
I
IL
Oscillator Input Current
V
IL =0,VCC = 5.5V
100
A
MICROWIRE TIMING
t
CS
Data to Clock Set Up Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Enable Pulse Width
See Data Input Timing
50
ns
Note 3: This ICC-PWDN represents CLK, DATA, LE and CE being tied to either higher than 0.8 VCC or lower than 0.2 VCC.
Note 4: Balanced input, |Z| = |R - jXc|, TA = 25C.
Note 5: Phase noise is measured 1 kHz off from the carrier frequency. Comparison frequency is 200 kHz. OSCIN frequency is 13 MHz.
Note 6: Except fIN and OSCIN.
Note 7: Typical values are determined from measurements on the reference evaluation boards. A 3 dB (3 sigma) degradation is estimated from statistical distribution
in manufacturing. Units will NOT be tested in production.
Charge Pump Current Specification Definitions
DS101362-4
I1 = CP sink current at VCPo =VP V
I2 = CP sink current at VCPo =VP/2
I3 = CP sink current at VCPo = V
I4 = CP source current at VCPo =VP V
I5 = CP source current at VCPo =VP/2
I6 = CP source current at VCPo = V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V.
1. ICPo vs VCPo = Charge Pump Output Current magnitude variation vs Voltage =
[12 * {|I1| |I3|}] / [12 * {|I1| + |I3|}] * 100%
and
[12 * {|I4| |I6|}] / [12 * {|I4| + |I6|}] * 100%
2. ICPo-sink vs ICPo-source = Charge Pump Output Current Sink vs Source Mismatch =
[|I2| |I5|] / [12 * {|I2| + |I5|}] * 100%
3. ICPo vs TA = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 @ temp| |I2 @ 25C|] / |I2 @ 25C| * 100%
and
[|I5 @ temp| |I5 @ 25C|] / |I5 @ 25C| * 100%
LMX2323
www.national.com
4
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