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參數(shù)資料
| 型號： | LMX2323TMX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PLL合成/DDS/VCOs |
| 英文描述： | PLL FREQUENCY SYNTHESIZER, 2000 MHz, PDSO16 |
| 封裝： | TSSOP-16 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 147K |
| 代理商： | LMX2323TMX |
Absolute Maximum Ratings (Note 1)
Power Supply Voltage (V
CC)
0.3V to 6.5V
Power Supply for Charge Pump (V
P)VCC to 6.5V
Voltage on Any Pin with
GND=0V (V
I)
0.3V to V
CC + 0.5V
Storage Temperature Range (T
S)
65C to +150C
Lead Temperature (solder, 4 sec.) (T
L)
+260C
ESD - Whole Body Model (Note 2)
2 kV
Recommended Operating
Conditions (Note 1)
Power Supply Voltage (V
CC)
2.7V to 5.5V
Power Supply for Charge pump (V
P)VCC to 5.5V
Operating Temperature (T
A)
40C to +85C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Conditions indicate conditions for which the
device is intended to be functional. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should be done on ESD pro-
tected workstations.
Electrical Characteristics
V
CC = 3.3V, VP = 3.3V; 40C < TA < 85C except as specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
GENERAL
I
CC
Power Supply Current
V
CC = 3.3V
3.5
mA
I
CC
V
CC = 2.7V to 5.5V
7.0
mA
I
CC-PWDN
V
CC = 5.5V (Note 3)
10
20
A
f
IN
RF Operating Frequency
0.1
2.0
GHz
f
OSC
Oscillator Frequency
5
40
MHz
f
φ
Phase Detector Frequency
10
MHz
Pf
IN
RF Input Sensitivity
Vcc=3.0V
-15
0
dBm
Vcc=5.0V
-10
0
dBm
Z
IN
RF Input Impedance
f = 900 MHz (Note 4)
130
360
f = 1900 MHz (Note 4)
100
150
V
OSC
Oscillator Sensitivity
0.4
0.8
1.2
V
PP
Phase Noise (Note 5)
f
IN = 900 MHz, VOSC ≥ 0.8 VPP
86
(Note 7)
dBc/Hz
f
IN = 900 MHz, VOSC ≥ 0.4 VPP
82
f
IN = 1800 MHz, VOSC ≥ 0.8 VPP
82
f
IN = 1800 MHz, VOSC ≥ 0.4 VPP
80
CHARGE PUMP
I
CPo-source
Charge Pump Output Current
V
CPo =VP/2
4.0
mA
I
CPo-sink
V
CPo =VP/2
4.0
mA
I
CPo-Tri
Charge Pump TRI-STATE
Current
0.5
≤ V
CPo ≤ VP - 0.5
2.5
0.1
2.5
nA
I
CPo vs
V
CPo
Charge Pump Output Current
Magnitude Variation vs Voltage
0.5
≤ V
CPo ≤ VP - 0.5
T
A = 25C
10
%
I
CPo-sink vs
I
CPo-source
Charge Pump Output Current
Sink vs Source Mismatch
V
CPo =VP/2
T
A = 25C
5%
I
CPo vs T
Charge Pump Output Current
Magnitude Variation vs
Temperature
V
CPo =VP/2
8%
DIGITAL INTERFACE (DATA, CLK,LE, CE)
V
OH
High-Level Output Voltage
I
OH = 500 A
V
CC0.4
V
OL
Low-Level Output Voltage
I
OL = 500 A
0.4
V
IH
High-Level Input Voltage
(Note 6)
0.8Vcc
V
IL
Low-Level Input Voltage (Note 6)
0.2Vcc
V
I
IH
High-Level Input Current (Clock,
Data, Load Enable)
V
IH =VCC = 5.5V
1.0
A
I
IL
Low-Level Input Current (Clock,
Data, Load Enable)
V
IL =0,VCC = 5.5V
1.0
A
I
IH
Oscillator Input Current
V
IH =VCC = 5.5V
100
A
LMX2323
www.national.com
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