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參數(shù)資料
| 型號(hào)： | LMX2323 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | PLLatinum? 2.0 GHz Frequency Synthesizer for RF Personal Communications |
| 中文描述： | PLLatinum？ 2.0千兆赫頻率合成射頻個(gè)人通信 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | LMX2323 |
Absolute Maximum Ratings
(Note 1)
Power Supply Voltage (V
CC
)
Power Supply for Charge Pump (V
P
)
Voltage on Any Pin with
GND = 0V (V
I
)
Storage Temperature Range (T
S
)
Lead Temperature (solder, 4 sec.) (T
L
)
ESD - Whole Body Model (Note 2)
0.3V to 6.5V
V
CC
to 6.5V
0.3V to V
CC
+ 0.5V
65C to +150C
+260C
2 kV
Recommended Operating
Conditions
(Note 1)
Power Supply Voltage (V
CC
)
Power Supply for Charge pump (V
P
)
Operating Temperature (T
A
)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Conditions indicate conditions for which the
device is intended to be functional. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
Note 2:
This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should be done on ESD
protected workstations.
2.7V to 5.5V
V
CC
to 5.5V
40C to +85C
Electrical Characteristics
V
CC
= 3.0V, V
P
= 3.0V; 40C
<
T
A
<
85C except as specified.
Symbol
Parameter
GENERAL
I
CC
Power Supply Current
I
CC
I
CC
-PWDN
f
IN
RF Operating Frequency
f
OSC
Oscillator Frequency
f
φ
Phase Detector Frequency
Pf
IN
RF Input Sensitivity
Conditions
Min
Typ
Max
Units
V
CC
= 3.0V
V
CC
= 2.7V to 5.5V
V
CC
= 5.5V (Note 3)
3.5
mA
mA
μA
GHz
MHz
MHz
dBm
dBm
V
PP
7.0
20
2.0
40
10
0
0
10
0.1
5
2.7V
≤
Vcc
≤
3.0V
3.0
<
Vcc
≤
5.0V
-15
-10
0.4
V
OSC
Oscillator Sensitivity
Phase Noise (Note 4)
0.8
86
82
82
80
V
CC
-0.3
f
IN
= 900 MHz, V
OSC
≥
0.8 V
PP
f
IN
= 900 MHz, V
OSC
≥
0.4 V
PP
f
IN
= 1800 MHz, V
OSC
≥
0.8 V
PP
f
IN
= 1800 MHz, V
OSC
≥
0.4 V
PP
(Note 6)
dBc/Hz
CHARGE PUMP
I
CPo-source
I
CPo-sink
I
CPo-Tri
Charge Pump Output Current
V
CPo
= V
P
/2
V
CPo
= V
P
/2
0.5
≤
V
CPo
≤
V
P
- 0.5
4.3
4.3
mA
mA
Charge Pump TRI-STATE
Current
Charge Pump Output Current
Magnitude Variation vs Voltage
Charge Pump Output Current
Sink vs Source Mismatch
Charge Pump Output Current
Magnitude Variation vs
Temperature
DIGITAL INTERFACE (DATA, CLK,LE, CE)
V
OH
High-Level Output Voltage
V
OL
Low-Level Output Voltage
V
IH
High-Level Input Voltage
(Note 5)
V
IL
Low-Level Input Voltage (Note 5)
I
IH
High-Level Input Current (Clock,
Data, Load Enable)
I
IL
Low-Level Input Current (Clock,
Data, Load Enable)
I
IH
Oscillator Input Current
I
IL
Oscillator Input Current
2.5
2.5
nA
I
CPo
vs
V
CPo
I
CPo-sink
vs
I
CPo-source
I
CPo
vs T
0.5
≤
V
CPo
≤
V
P
- 0.5
T
A
= 25C
V
CPo
= V
P
/2
T
A
= 25C
V
CPo
= V
P
/2
10
%
5
%
8
%
I
OH
= 500 μA
I
OL
= 500 μA
V
CC
0.4
V
V
0.4
0.8Vcc
V
0.2Vcc
V
V
IH
= V
CC
= 5.5V
1.0
1.0
μA
V
IL
= 0, V
CC
= 5.5V
1.0
1.0
μA
V
IH
= V
CC
= 5.5V
V
IL
= 0, V
CC
= 5.5V
100
μA
μA
100
L
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